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Professional interests/researches
Microelectronics,
Power electronics,
Schottky diodes, thin films structures,
RTP processes

Education:
- BSUIR, Electronic engineering, 1996,
- PhD, 2005

Working career:
«Transistor» Branch of JSC «INTEGRAL» - «INTEGRAL» holding managing company (1996 - 1997 Electrcial Engineer, 1997-2001 Process Engineer, 2001 - 2006 Leading Process Engineer, 2006 - 2007 Head of Laboratory, 2007 - 2008 First Deputy of Chief Process Engineer, 2008 - 2013 Chief Process Engineer, since 2013 Deputy Director of Branch for Technical Issues)
Subject of the doctor’s theses: «Thin-film elements design and formation methods for silicon Schottky diodes with improved reproducibility of properties in a batch production» (05.27.01), their defense 29.12.2005.
Subject of researches and their current results: Contact and barrier structures of Schottky diodes for power electronics, rapid thermal treatment processes.

Taught academic subjects:
- Design and Manufacture of Integrated Electronics Products (252 h),
- Program-controlled Technological Equipment (286 h)

Main publications:
1. Lutsenko E.V., Rzheutski M.V., Vainilovich A.G., Svitsiankou I.E., Nagorny A.V., Shulenkova V.A., Yablonskii G.P., Alekseev A.N., Petrov S.I., Solov’ev Ya.A., Pyatlitski A.N., Zhigulin D.V., Solodukha V.A. Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy. Quantum Electronics. 2019; 49 (6): 540-544.
2. Rzheutski M.V., Solovjov Ja.À., Vainilovich A.G., Svitsiankou I.E., Pyatlitski A.N., Zhyhulin D.V., Lutsenko E.V. Ammonia molecular beam epitaxy of AlGaN heterostructures on sapphire substrates. Doklady BGUIR. 2019; 7(125): 144-151.
3. Shulenkova B.A., Lutsenko E.V., Danilchik A.V., Solovjov Ja.À., Pyatlitski A.N., Kirasirava M.V. Femtosecond laser scribing of sapphire at wavelength 1040 and 520 nm. Doklady BGUIR. 2019; (125) 7: 152-156.
4. Solodukha V.A., Snitovsky Yu.P., Soloviev Ya.A. Peculliarities of the Method in internal formation of structures in bipolar and CMOS technologies. Bulletin of the Yugra State University. 2019; (53) 2: 44-61.
5. Solovjov J.À., Pilipenko V.A. Effect of rapid thermal treatment conditions on electrophysical properties of chromium thin films on silicon. Doklady BGUIR. 2019; (126) 7-8: 157-164.
6. Solovjov Ja.À., Pilipenko V.A. Effect of rapid thermal treatment tåmperature on electrophysical properties of nickel films on silicon. Doklady BGUIR. 2020; 18 (1): 81-88.
7. Solovjov J.A., Pilipenko V.A., Gaiduk P.I. Structure and morphology of CrSi2 layers formed by rapid thermal treatment. Doklady BGUIR. 2020; 18 (4): 71-79.
8. Solovjov Ja.A., Pilipenko V.A., Gaiduk P.I. Chromium disilicide formation during rapid thermal treatment in thermal balance regime. Proceedings of Francisk Scorina Gomel State University. 2020; (120) 3: 179 - 185.
9. Odzaev V.B., Panfilenka A.K., Pyatlitski A.N., Prasalovich U.S, Kovalchuk N.S., Soloviev Ya.A., Filipenia V.A., Shestovski.D.V. Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs. Journal of the Belarusian State University. Physics. 2020; 3: 55-64.
10. Solovjov J.A., Pilipenko V.A., Yakovlev V.P. Simulation of silicon wafers heating during rapid thermal processing using "UBTO 1801" unit. Doklady BGUIR. 2020; 18(7): 79-86.

Merits, awards, incentives:
The Ministry of Industry award winner in field of science and technology in 2009.
The Ministry of Industry award winner in field of science and technology in 2010.
The Ministry of Industry award winner in field of science and technology in 2011.
The Ministry of Industry award winner in field of science and technology in 2013.
Diploma of the State Committee for Science and Technology of the Republic of Belarus in 2020.